IRVINE, Calif.–(BUSINESS WIRE)–Toshiba
America Electronic Components, Inc. (TAEC)*
today announced the addition of two new N-channel devices to its U-MOS
IX-H family of high-efficiency, high-speed switching MOSFETs. The
TK3R1E04PL and TK3R1A04PL help designers improve performance and reduce
power consumption in power supply applications such as DC-DC converters
and the secondary side circuits of AC-DC switched-mode power supplies.
The TK3R1E04PL (TO-220 package) and TK3R1A04PL (TO-220SIS package) have
a maximum VDSS rating of 40V and can operate with gate-source
voltages (VGSS) of +/-20V. Maximum DC drain currents for the
new devices are 100A and 82A, respectively.
By providing a ‘best-in-class’ trade-off between resistance and
capacitance, the TK3R1E04PL and TK3R1A04PL support optimum performance
and efficiency in power supply applications. This includes synchronous
rectification designs, where the low output charge (QOSS)
reduces device contribution to rectification power loss. Both devices
have a low typical on-resistance (RDS(ON)) of just 2.5mΩ (@VGS=10V),
and a typical output capacitance (COSS) of 1000pF. These
characteristics ensure efficient on-state operation, rapid switching and
lower switching losses.
The new MOSFETs operate with channel temperatures up to 175ºC, and
Toshiba’s U-MOS IX-H technology ensures stable operation over a wide
range of temperatures and load conditions.
Pricing and Availability
The TK3R1E04PL and TK3R1A04PL are available now. For more details,
samples and pricing information, please contact your local Toshiba Sales
*About Toshiba Corp. and Toshiba America Electronic Components, Inc.
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